Influence of the high-temperature annealing on the anisotropy parameters of mobility and the anisotropy of the thermoelectromotive-drag of electrons by phonons in n−Si

1Baranskii, PI, 2Gaidar, GP
1V.Ye. Lashkaryov Institute of Semiconductor Physics of the NAS of Ukraine, Kyiv
2Institute for Nuclear Research of the NAS of Ukraine, Kyiv
Dopov. Nac. akad. nauk Ukr. 2014, 5:70-75
https://doi.org/10.15407/dopovidi2014.05.070
Section: Physics
Language: Ukrainian
Abstract: 
In the experiments with crystals of $n{-}{\rm Si}$ doped with impurities of phosphorus through the melt and by the nuclear transmutation, the influence of the high-temperature annealing (at $T=1200$ $^\circ\!$C during 2 h) on the anisotropy parameter of mobility $K=\mu_\bot/\mu_{\|} $ and on the anisotropy parameter of the thermoelectromotive-drag of electrons by phonons $M=\alpha_{\|}^{\text{ph}} /\alpha_\bot^{\text{ph}}$ is investigated. It is shown that, in silicon crystals doped through the melt, the thermoannealing leads to a marked reduction in the value of M, whereas the value of this parameter increases by about 1.5 times in transmutation-doped samples. It is found that the anisotropy parameter of mobility K in the crystals of both types remains almost unchanged. The explanation of the results obtained is proposed.
Keywords: anisotropy, high-temperature annealing, phonons, thermoelectromotive-drag
References: 

1. Tanenbaum M., Mills A. D. J. Electrochemical Soc., 1961, 108, No. 2: 171–176. https://doi.org/10.1149/1.2428036
2. Baranskiy P. I., Bugai A. A., Girii V. A. et al. Transmutational doping of silicon: preparation, physical properties, application. Kyiv: Inst. of Physics, Academy of Sciences of the UkrSSR, 1984 (in Russian).
3. Vavilov V. S., Ukhin N. A. Radiation effects in semiconductors and semiconductor devices. Moscow: Atomizdat, 1969. – 312 p.
4. Konozenko I. D., Semeniuk A. K., Khivrich V. I. Radiation effects in silicon. Kyiv: Nauk. dumka,1974 (in Russian).
5. Smirnov L. S., Solovev S. P., Stas V. F., Kharchenko V. A. Doping of semiconductors by the method of nuclear reactions. Smirnov L. S. (Ed.). Novosibirsk: Nauka, 1981 (in Russian).
6. Vavilov V. S., Kekelidze N. P., Smirnov L. S. Effect of radiation on semiconductors. Moscow: Nauka, 1988 (in Russian).
7. Groza A. A., Lytovchenko P. G., Starchyk M. I. The effects of radiation in the infrared absorption and structure of silicon. Kyiv: Nauk. dumka, 2006 (in Ukrainian).
8. Baranskiy P. I., Klochkov V. P., Potykevich I. V. Semiconductor Electronics. Directory. Kyiv: Nauk. dumka, 1975 (in Russian).
9. Baryakhtar V. G. Solid State Physics. Encyclopedic Dictionary. Vol. II. Kyiv: Nauk. dumka,1998. (in Russian).
10. Herrmann H. A., Herzer H. J. Electrochem. Soc., 1975, 122, No. 11: 1568–1569. https://doi.org/10.1149/1.2134070
11. Miz J. Processes of neutron transmutation doping - a new reactor technology. In: Miz J. (Ed.). Neutron transmutation doping of semiconductors. Solid State Physics News. Iss. 11. (Trans. V. N. Mordkovich). Moscow: Mir, 1982 (in Russian).
12. Smith T. Neutron doping at research reactors in Harrowell. In: Miz J. (Ed.). Neutron transmutation doping of semiconductors. Solid State Physics News. Iss. 11. (Trans. V. N. Mordkovich). Moscow: Mir, 1982 (in Russian).
13. Baranskiy P. I., Savyak V. V., Shcherbina L. A. Fizika i tekhnika poluprovodnikov, 1980, 14, No. 2: 302–305 (in Russian).
14. Baranskiy P. I., Buda I. S., Kolomoets V. V. et al. Fizika i tekhnika poluprovodnikov, 1975, 9, No. 9: 1680-1684 (in Russian).
15. Baranskiy P. I., Savyak V. V., Shcherbina L. A. Fizika i tekhnika poluprovodnikov, 1980, 14, No. 2: 393-396 (in Russian).