Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals

TitleInfluence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
Publication TypeJournal Article
Year of Publication2016
AuthorsGaidar, GP, Baranskii, PI
Abbreviated Key TitleDopov. Nac. akad. nauk Ukr.
DOI10.15407/dopovidi2016.07.062
Issue7
SectionPhysics
Pagination62-69
Date Published7/2016
LanguageUkrainian
Abstract

In n-type Cz−Si samples doped by the germanium isovalent impurity, a significant decrease in the efficiency of formation of thermodonors in the thermoannealing process is found, as well as an increase of the radiation hardness by order of magnitude under the irradiation of n-Si ⟨Ge⟩ by fast-pile neutrons is established.
Keywordsfast neutrons, germanium, irradiation, isovalent impurity, radiation hardness, silicon, thermoannealing
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