Dependence of the anisotropy parameter of drag thermal e.m.f. On the concentration of impurities in n-Ge and n-Si crystals

1Gaidar, GP, 2Baranskii, PI
1Institute for Nuclear Research of the NAS of Ukraine, Kyiv
2V.Ye. Lashkaryov Institute of Semiconductor Physics of the NAS of Ukraine, Kyiv
Dopov. Nac. akad. nauk Ukr. 2017, 5:45-50
Section: Physics
Language: Ukrainian
At T = 85 K, the concentration dependences of the anisotropy parameter of electron-phonon drag thermal e.m.f. in a wide range of concentrations ($1.9 \cdot 10^{12} \leqslant n_{e} \equiv N_{I} \leqslant 4.6 \cdot 10^{17} сm^{–3}) are investigated on $n-Ge$ and $n-Si$ crystals. It is shown that the parameter M is insensitive in $n-Ge$ (unlike $n-Si$) to the presence of impurities in the crystals up to concentrations $∼10^{15} сm^{–3}$.
Keywords: anisotropy parameter of thermal e.m.f., germanium, impuritu concentration, silicon
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