Dependence of the anisotropy parameter of drag thermal e.m.f. On the concentration of impurities in n-Ge and n-Si crystals

1Gaidar, GP
2Baranskii, PI
1Institute for Nuclear Research of the NAS of Ukraine, Kyiv
2V.Ye. Lashkaryov Institute of Semiconductor Physics of the NAS of Ukraine, Kyiv
Dopov. Nac. akad. nauk Ukr. 2017, 5:45-50
Section: Physics
Language: Ukrainian
At T = 85 K, the concentration dependences of the anisotropy parameter of electron-phonon drag thermal e.m.f. in a wide range of concentrations ($1.9 \cdot 10^{12} \leqslant n_{e} \equiv N_{I} \leqslant 4.6 \cdot 10^{17} сm^{–3}) are investigated on $n-Ge$ and $n-Si$ crystals. It is shown that the parameter M is insensitive in $n-Ge$ (unlike $n-Si$) to the presence of impurities in the crystals up to concentrations $∼10^{15} сm^{–3}$.
Keywords: anisotropy parameter of thermal e.m.f., germanium, impuritu concentration, silicon
  1. Gaidar, G. P. & Baranskii, P. I. (2014). Thermoelectric properties of transmutation doped silicon crystals. Physica B: Condensed Matter, 441, pp. 80-88.
  2. Barans'kyi, P. I., Bieliaiev, O. Ye., Gaidar, G. P., Klad'ko, V. P. & Kuchuk, A. V. (2014). Problems of diagnosis actual semiconductor crystals. Kiev: Naukova Dumka (in Ukrainian).
  3. Gaidar, G. & Baranskii, P. (2015). Optimization of the thermoelectric figure of merit in the transmutationdoped and ordinary n-Si crystals. Phys. Status Solidi A, 212, No. 10, pp. 2146-2153.
  4. Herring, C., Geballe, T. H. & Kunzler, J. E. (1959). Analysis of Phonon-Drag Thermomagnetic Effects in n-Type Germanium. Bell System Tech. J., 38, No. 3, pp. 657-747.
  5. Baranskiy, P. I., Buda, I. S., Kolomoets, V. V., Samoylovich, A. G. & Sus', B. A. (1974). Study of the anisotropy of the entrainment of electrons by phonons in n-Ge. Fizika i tekhnika poluprovodnikov, 8, No. 11, pp. 2159-2163 (in Russian).
  6. Laff, R. A. & Fan, H. Y. (1958). Magnetoresistance in n-Type Germanium at Low Temperatures. Phys. Rev., 112, No. 2, pp. 317-321.
  7. Gaidar, G. P. (2013). Mechanisms of the Anisotropy Formation of Thermoelectric and Thermomagnetic Phenomena in the Multi-valley Semiconductors. Fizyka i khimiia tverdogo tila, 14, No. 1, pp. 7-20 (in Ukrainian).
  8. Baranskiy, P. I., Buda, I. S., Dakhovskiy, I. V. & Kolomoets, V. V. (1977). Electrical and galvanomagnetic phenomena in anisotropic semiconductors. Kiev: Naukova Dumka (in Russian).
  9. Bonch-Bruevich, V. L. & Kalashnikov, S. G. (1977). Physics of semiconductors. Moskva: Nauka (in Russian).