Features of the technology of formation of metal contacts to discrete IR and THz radiation detectors based on CdHgTe epitaxial layers

1Tsybrii, ZF
1V.Ye. Lashkaryov Institute of Semiconductor Physics of the NAS of Ukraine, Kyiv
Dopov. Nac. akad. nauk Ukr. 2019, 9:34-40
https://doi.org/10.15407/dopovidi2019.09.034
Section: Physics
Language: Ukrainian
Abstract: 

The technological features of the formation of two-layer metal contacts to discrete detectors for the infrared and terahertz spectral bands made on the basis of epitaxial layers of CdHgTe grown on CdZnTe substrates by the liquid phase epitaxy method are given. The optimal combination of metals (adhesive layer — conductive layer), which creates an ohmic contact to the p- and n-types of CdHgTe in the process of discrete detectors manufacturing by the planar technology is found. Measured current-voltage characteristics of the Mo—Au and Mo—In contacts to the epitaxial layers of p-CdHgTe show a linear behavior both at room temperature and at T = 80 K.

Keywords: cadmium—mercury—telluride, IR and THz detectors, multilayered contact
References: 

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