Peculiarities of changes in the structure and electrophysical characteristics of n-Si under the effect of various thermal treatment regimes

1Gaidar, GP
1Institute for Nuclear Research of the NAS of Ukraine, Kyiv
Dopov. Nac. akad. nauk Ukr. 2020, 5:42-51
Section: Physics
Language: Ukrainian

Crystals of n-silicon doped with an impurity of phosphorus are studied both by the traditional metallur gical method (in the process of growth through a melt) and the nuclear transmutation method (conversion of silicon isotopes in the process of thermal neutron capture by them). The principal difference of the transmutation doping from the metallurgical doping method is that dopants are not introduced into the initial material from the outside, but are formed during the irradiation process directly from the atoms of the doped material. In order to anneal the radiation defects and activate the phosphorus-31 atoms, which exhibit donor pro perties only at lattice sites in the bulk of silicon, the transmutation-doped silicon was preliminarily subjected to the technological annealing at a temperature of 850 °С for 2 h, and then it was subjected to thermal treatments followed by the cooling with different rates. The effect of both the duration of a thermal annealing and the cooling rate from the annealing temperature to room one on the changes in the structure and electrophysical characteristics of n-Si 〈P〉 crystals doped through the melt and by the nuclear transmutation method is revealed. The appearance of dislocations in transmutationdoped Si crystals after the high-temperature annealing for 2 h and a subsequent rapid cooling is found. It is established that the high-temperature annealing for 72 h of Si samples, regardless of the method of phosphorus doping, contributes to the generation of deep donor centers, both during the slow and fast coolings, and significantly reduces the charge carrier concentration.

Keywords: cooling rate, Hall parameters, microstructure, nuclear transmutation, silicon, thermal annealing, thermal neutrons

1. Bukowski, A. (2013). Czochralski-grown silicon crystals for microelectronics. Acta Physica Polonica A, 124, No. 2, pp. 235-238. Doi:
2. Chervonyi, I. F., Kutsova, V. Z., Pozhuiev, V. I., Shvets, E. Ia., Nosko, O. A., Yehorov, S. H. & Voliar, R. M. (2009). Semiconductor silicon: Theory and technology of production. Zaporozhye: Zaporizka derzhavna inzhenerna akademiia (in Ukrainian).
3. El-Kareh, B. (2009). Silicon devices and process integration. Deep submicron and nano-scale technologies. New York: Springer Science+Business Media, LLC.
4. Baranskii, P. I., Belyaev, O. E., Gaidar, G. P., Kladko, V. P. & Kuchuk, A. V. (2014). Problems of the diagnostics of real semiconductor crystals. Kyiv: Naukova Dumka (in Ukrainian).
5. Murin, L. I., Lindstrom, J. L., Davies, G. & Markevich, V. P. (2006). Evolution of radiation-induced carbon—oxygen-related defects in silicon upon annealing: LVM studies. Nucl. Instrum. Meth. Phys. Res. B, 253, No. 1-2, pp. 210-213. Doi:
6. Mezhennyiy, M. V., Milvidskiy, M. G. & Reznik, V. Ya. (2009). The effect of fast thermal annealing on the features of defect formation in silicon wafers while creating an efficient internal getter. Poverhnost. Rentgenovskie, sinhrotronnyie i neytronnyie issledovaniya, No. 8, pp. 49-56 (in Russian).
7. Shlimak, I. S. (1999). Neutron transmutation doping of semiconductors: science and applications. Fizika tverdogo tela, 41, No. 5, pp. 794-798 (in Russian). Doi:
8. Babich, V. M., Bletskan, N. I. & Venger, E. F. (1997). Oxygen in Silicon Single Crystals. Kyiv: Interpres LTD (in Russian).
9. Pesola, M., Lee, Y. J., von Boehm, J., Kaukonen, M. & Nieminen, R. M. (2000). Structures of thermal double donors in silicon. Phys. Rev. Lett., 84, No. 23, pp. 5343-5346. Doi:
10. Emtsev, V. V., Jr., Ammerlaan, C. A. J., Emtsev, V. V., Oganesyan, G. A., Misiuk, A., Surma, B., Bukowski, A., Londos, C. A. & Potsidi, M. S. (2003). Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon. Cryst. Res. Technol., 38, No. 3-5, pp. 394-398. Doi:
11. Usenko, A. E. & Yuhnevich, A. V. (2009). Detection of microdefects in perfect single crystals of silicon by the method of selective dissolution. Izvestiya Vyisshih uchebnyih zavedeniy. Materialyi elektronnoy tehniki, No. 2, pp. 38-43 (in Russian).
12. Nijdam, A. J., Gardeniers, J. G. E., Gui, C. & Elwenspoek, M. (2000). Etching pits and dislocations in Si {111}. Sensors and Actuators A, 86, No. 3, pp. 238-247. Doi:
13. Usenko, A. E. & Yuhnevich, A. V. (2007). Features of the surface morphology of silicon single crystals when dissolved in acid polishing etchants. Zhurnal obschey himii, 77, No. 3, pp. 400-404 (in Russian). Doi:
14. Khorosheva, M. A., Kveder, V. V. & Seibt, M. (2015). On the nature of defects produced by motion of dislocations in silicon. Phys. Status Solidi A, 212, No. 8, pp. 1695-1703. Doi: