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Found 4 results
Author Title [ Year(Asc)]
Filters: Author is P.I. Baranskii  [Clear All Filters]
2017
Gaidar GP, Baranskii PI. Dependence of the anisotropy parameter of drag thermal e.m.f. On the concentration of impurities in n-Ge and n-Si crystals. 2017 ;(5):45-50.
2016
Gaidar GP, Baranskii PI. Influence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals. 2016 ;(7):62-69.
2015
Gaidar GP, Baranskii PI. Experimental proof of the shape constancy for isoenergetic ellipsoids in n–Ge under strong uniaxial elastic deformation. Reports of the National Academy of Sciences of Ukraine. 2015 ;(6):68-73.
2014
Baranskii PI, Gaidar GP. Influence of the high-temperature annealing on the anisotropy parameters of mobility and the anisotropy of the thermoelectromotive-drag of electrons by phonons in n−Si. 2014 ;(5):70-75.