On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉

TitleOn the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉
Publication TypeJournal Article
Year of Publication2019
AuthorsGaidar, GP
Abbreviated Key TitleDopov. Nac. akad. nauk Ukr.
Date Published05/2019

In the framework of the theory of anisotropic scattering, the expressions useful for the practical application are obtained for many-valley semiconductors such as n-Ge and n-Si. These relations allow us to calculate the tensoresistance in saturation for crystallographic directions, where this effect is very small, by using the measurement results of tensoresistance in other crystallographic directions, where this effect has large values.

Keywordsanisotropy parameter of mobility, germanium, silicon, tensoresistance

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