@article{Gaidar_2022, place={Kyiv, Ukraine}, title={On the methodology of determining the transverse tensoresistance in multi-valley semiconductors}, url={https://dopovidi-nanu.org.ua/ojs/index.php/dp/article/view/2022-2-6}, DOI={10.15407/dopovidi2022.02.048}, abstractNote={<p>The transverse (the current in the sample is oriented perpendicular to the deformation axis) and longitudinal<br>(the current is directed along the deformation axis) tensoresistances of high-resistance n-Si crystals are<br>investigated. The mobility anisotropy parameter was calculated for these two cases. The coincidence (within the<br>experimental errors) of the obtained values of the parameter K was established when the current passes along the<br>direction of deformation and perpendicular to it. Using n-Ge crystals, the reliability of the technique for measuring<br>the transverse tensoresistance was confirmed by calculating the mobility anisotropy parameter using the data<br>obtained from two independent experiments. A good agreement was obtained for the values of the anisotropy<br>parameter K, calculated from the measurement data of only the longitudinal tensoresistance and from the measurement<br>data of the longitudinal and transverse tensoresistances. It was experimentally confirmed that under<br>conditions of strong elastic directional compressive deformation (in the absence of manifestation of the shift deformation<br>components in n-Si crystals), only relative displacements of isoenergetic ellipsoids in multi-valley<br>semiconductors along the energy scale occur, but the shape of the ellipsoids remains practically unchanged.</p>}, number={2}, journal={Reports of the National Academy of Sciences of Ukraine}, author={Gaidar, G.P.}, year={2022}, month={May}, pages={48–57} }