Enhancement of the efficiency of heat removal from powerful electronic devices through thermal interfaces based on aluminum nitride films

1Rudenko, EM, 2Sorokin, VM, 1Korotash, IV, 1Polotsky, DYu., 1Krakovny, AO, 1Suvorov, OYu., 1Belogolovskii, MO, 2Pekur, DV
1G.V. Kurdyumov Institute for Metal Physics of the NAS of Ukraine, Kyiv
2V.Ye. Lashkaryov Institute of Semiconductor Physics of the NAS of Ukraine, Kyiv
Dopov. Nac. akad. nauk Ukr. 2018, 3:59-68
https://doi.org/10.15407/dopovidi2018.03.059
Section: Physics
Language: Ukrainian
Abstract: 

The efficiency of aluminum nitride films as thermal interfaces has been studied. It is shown that such films obtained in a hybrid helicon-arc ion-plasma reactor significantly improve the heat removal from the crystals of electronic devices, in particular, from powerful LEDs or LED assemblies, and thus noteworthy increase their luminosity, reliability, and durability.

Keywords: aluminum nitride, heat sink, LED, thermal interfaces
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