Dependence of the anisotropy parameter of drag thermal e.m.f. On the concentration of impurities in n-Ge and n-Si crystals

TitleDependence of the anisotropy parameter of drag thermal e.m.f. On the concentration of impurities in n-Ge and n-Si crystals
Publication TypeJournal Article
Year of Publication2017
AuthorsGaidar, GP, Baranskii, PI
Abbreviated Key TitleDopov. Nac. akad. nauk Ukr.
DOI10.15407/dopovidi2017.05.045
Issue5
SectionPhysics
Pagination45-50
Date Published5/2017
LanguageUkrainian
Abstract
At T = 85 K, the concentration dependences of the anisotropy parameter of electron-phonon drag thermal e.m.f. in a wide range of concentrations ($1.9 \cdot 10^{12} \leqslant n_{e} \equiv N_{I} \leqslant 4.6 \cdot 10^{17} сm^{–3}) are investigated on $n-Ge$ and $n-Si$ crystals. It is shown that the parameter M is insensitive in $n-Ge$ (unlike $n-Si$) to the presence of impurities in the crystals up to concentrations $∼10^{15} сm^{–3}$.
Keywordsanisotropy parameter of thermal e.m.f., germanium, impuritu concentration, silicon
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